| PART |
Description |
Maker |
| 2N5XXX |
(2N5xxx) High Voltage Silicon Low and Medium Power Transistors
|
Semiconductor Technology
|
| AMF-3D-001080-18-13P AMF-4F-00100100-15-10P AMF-4F |
100 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
5400 MHz - 5900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
500 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
30000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
4400 MHz - 5100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1500 MHz - 1800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
38000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
40000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
41000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
3000 MHz - 3500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
250 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
15000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
30 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
18000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7900 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2100 MHz - 2400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
200 MHz - 400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
50 MHz - 100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6400 MHz - 7200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
15500 MHz - 16500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
950 MHz - 1450 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
9500 MHz - 10500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
800 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
9000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
4000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| PSD303-B-15J PSD303-B-15L PSD303-B-15M PSD303-B-15 |
Low Cost Field Programmable Microcontroller Peripherals
PSD3XX/ZPSD3XX FAMILY LOW COST MICROCONTROLLER PERIPHERALS
PSD3XX/ZPSD3XX FAMILY LOW COST MICROCONTROLLER PERIPHERALS
Low cost field programmable microcontroller peripherals, 150ns
Low cost field programmable microcontroller peripherals, 70ns
|
ST Microelectronics
SGS Thomson Microelectronics
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| MAX6332UR20D3-T MAX6333UR20D3-T MAX6334UR20D3-T MA |
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 20ms.
3-Pin, Ultra-Low-Voltage, Low-Power P Reset Circuits
3-Pin, Ultra-Low-Voltage, Low-Power μP Reset Circuits
3-Pin Ultra-Low-Voltage Low-Power P Reset Circuits
From old datasheet system
3-Pin, Ultra-Low-Voltage, Low-Power レP Reset Circuits
3-Pin / Ultra-Low-Voltage / Low-Power P Reset Circuits
TV 79C 79#22D SKT RECP 3引脚，超低电压，低功耗レP复位电路
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 1ms.
|
MAXIM - Dallas Semiconductor
http://
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| MRF137 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
From old datasheet system
RF POWER FIELD-EFFECT TRANSISTOR
|
ADVANCED SEMICONDUCTOR INC
|
